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KSE13003H3ASTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSE13003H3ASTU
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 8819
- Description: KSE13003H3ASTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Terminations | 3 |
| Max Power Dissipation | 20W |
| Frequency | 4MHz |
| Base Part Number | KSE13003 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 20W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 19 @ 500mA 2V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 500mA, 1.5A |
| Collector Emitter Breakdown Voltage | 400V |
| Transition Frequency | 4MHz |
| Collector Base Voltage (VCBO) | 700V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 8 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Weight | 761mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
KSE13003H3ASTU Overview
In this device, the DC current gain is 19 @ 500mA 2V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 500mA, 1.5A.The emitter base voltage can be kept at 9V for high efficiency.As you can see, the part has a transition frequency of 4MHz.Collector current can be as low as 1.5A volts at its maximum.
KSE13003H3ASTU Features
the DC current gain for this device is 19 @ 500mA 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
KSE13003H3ASTU Applications
There are a lot of ON Semiconductor KSE13003H3ASTU applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
