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KSE13003H2ASTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSE13003H2ASTU
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 4914
- Description: KSE13003H2ASTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Weight | 761mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 400V |
| Max Power Dissipation | 20W |
| Current Rating | 1.5A |
| Frequency | 4MHz |
| Base Part Number | KSE13003 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 20W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 14 @ 500mA 2V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 500mA, 1.5A |
| Collector Emitter Breakdown Voltage | 400V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Base Voltage (VCBO) | 700V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 8 |
| Height | 11mm |
| Length | 8mm |
| Width | 3.25mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSE13003H2ASTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14 @ 500mA 2V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 500mA, 1.5A.An emitter's base voltage can be kept at 9V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.4MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 1.5A volts.
KSE13003H2ASTU Features
the DC current gain for this device is 14 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz
KSE13003H2ASTU Applications
There are a lot of ON Semiconductor KSE13003H2ASTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
