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KSD261YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSD261YBU
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 1396
- Description: KSD261YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92-3 |
| Weight | 178.2mg |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 500mW |
| Current Rating | 500mA |
| Base Part Number | KSD261 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Power - Max | 500mW |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 20V |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Current - Collector (Ic) (Max) | 500mA |
| Collector Emitter Saturation Voltage | 180mV |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 120 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
KSD261YBU Overview
This device has a DC current gain of 120 @ 100mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 180mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.There is no device package available from the supplier for this product.A 20V maximal voltage - Collector Emitter Breakdown is present in the device.The maximum collector current is 500mA volts.
KSD261YBU Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
the supplier device package of TO-92-3
KSD261YBU Applications
There are a lot of ON Semiconductor KSD261YBU applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
