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KSD2012GTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSD2012GTU
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 4240
- Description: KSD2012GTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Weight | 2.27g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 25W |
| Current Rating | 3A |
| Frequency | 3MHz |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 25W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 3MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 100μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 3MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 100 |
| Height | 15.87mm |
| Length | 10.16mm |
| Width | 2.54mm |
KSD2012GTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 500mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.When VCE saturation is 1V @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In the part, the transition frequency is 3MHz.In extreme cases, the collector current can be as low as 3A volts.
KSD2012GTU Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz
KSD2012GTU Applications
There are a lot of ON Semiconductor KSD2012GTU applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
