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KSD1692YS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSD1692YS
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 3788
- Description: KSD1692YS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 1.3W |
| Current Rating | 3A |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 15W |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4000 @ 1.5A 2V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 1.5mA, 1.5A |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Base Voltage (VCBO) | 150V |
| Emitter Base Voltage (VEBO) | 8V |
| hFE Min | 2000 |
| Continuous Collector Current | 3A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Weight | 761mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
KSD1692YS Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 4000 @ 1.5A 2V.The collector emitter saturation voltage is 1.2V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 1.5mA, 1.5A.A constant collector voltage of 3A is necessary for high efficiency.Emitter base voltages of 8V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.During maximum operation, collector current can be as low as 3A volts.
KSD1692YS Features
the DC current gain for this device is 4000 @ 1.5A 2V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 1.5mA, 1.5A
the emitter base voltage is kept at 8V
the current rating of this device is 3A
KSD1692YS Applications
There are a lot of ON Semiconductor KSD1692YS applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
