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KSD1616AGBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSD1616AGBU
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 3754
- Description: KSD1616AGBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 179mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 750mW |
| Terminal Position | BOTTOM |
| Current Rating | 1A |
| Frequency | 160MHz |
| Base Part Number | KSD1616 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 750mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 160MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 160MHz |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 135 |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSD1616AGBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 50mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.As you can see, the part has a transition frequency of 160MHz.During maximum operation, collector current can be as low as 1A volts.
KSD1616AGBU Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 160MHz
KSD1616AGBU Applications
There are a lot of ON Semiconductor KSD1616AGBU applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
