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KSC945YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSC945YTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 7314
- Description: KSC945YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 250mW |
| Terminal Position | BOTTOM |
| Current Rating | 150mA |
| Frequency | 300MHz |
| Base Part Number | KSC945 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 250mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 150mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 150mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Height | 4.58mm |
| Length | 4.58mm |
| Width | 3.86mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSC945YTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 150mA.There is a transition frequency of 300MHz in the part.A breakdown input voltage of 50V volts can be used.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
KSC945YTA Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945YTA Applications
There are a lot of ON Semiconductor KSC945YTA applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
