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KSC900LTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSC900LTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 2801
- Description: KSC900LTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92-3 |
| Weight | 240mg |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2002 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 250mW |
| Current Rating | 50mA |
| Frequency | 100MHz |
| Base Part Number | KSC900 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 250mW |
| Power - Max | 250mW |
| Gain Bandwidth Product | 100MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 350 @ 500μA 3V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 2mA, 20mA |
| Collector Emitter Breakdown Voltage | 25V |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 50mA |
| Collector Emitter Saturation Voltage | 100mV |
| Frequency - Transition | 100MHz |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 120 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
KSC900LTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 350 @ 500μA 3V DC current gain.As it features a collector emitter saturation voltage of 100mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 2mA, 20mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Its current rating is 50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is no device package available from the supplier for this product.Collector Emitter Breakdown occurs at 25VV - Maximum voltage.The maximum collector current is 50mA volts.
KSC900LTA Features
the DC current gain for this device is 350 @ 500μA 3V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 200mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
the supplier device package of TO-92-3
KSC900LTA Applications
There are a lot of ON Semiconductor KSC900LTA applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
