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KSC900GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi
- Manufacturer: Rochester Electronics
- NO: 699-KSC900GTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 2881
- Description: KSC900GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | MATTE TIN |
| Additional Feature | LOW NOISE |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 250mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500μA 3V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 2mA, 20mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 50mA |
| Transition Frequency | 100MHz |
| Frequency - Transition | 100MHz |
| RoHS Status | ROHS3 Compliant |
KSC900GTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500μA 3V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 2mA, 20mA.100MHz is present in the transition frequency.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
KSC900GTA Features
the DC current gain for this device is 200 @ 500μA 3V
the vce saturation(Max) is 200mV @ 2mA, 20mA
a transition frequency of 100MHz
KSC900GTA Applications
There are a lot of Rochester Electronics, LLC KSC900GTA applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
