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KSC5502DTM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSC5502DTM
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 639
- Description: KSC5502DTM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 50W |
| Terminal Form | GULL WING |
| Current Rating | 2A |
| Frequency | 11MHz |
| Base Part Number | KSC5502 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 50W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 11MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4 @ 1A 1V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 200mA, 1A |
| Collector Emitter Breakdown Voltage | 600V |
| Transition Frequency | 11MHz |
| Collector Emitter Saturation Voltage | 310mV |
| Max Breakdown Voltage | 600V |
| Collector Base Voltage (VCBO) | 1.2kV |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 12 |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSC5502DTM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 4 @ 1A 1V.The collector emitter saturation voltage is 310mV, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.11MHz is present in the transition frequency.As a result, it can handle voltages as low as 600V volts.When collector current reaches its maximum, it can reach 2A volts.
KSC5502DTM Features
the DC current gain for this device is 4 @ 1A 1V
a collector emitter saturation voltage of 310mV
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 2A
a transition frequency of 11MHz
KSC5502DTM Applications
There are a lot of ON Semiconductor KSC5502DTM applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
