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KSC5402DTTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSC5402DTTU
- Package: TO-220-3
- Datasheet:
- Stock: 3344
- Description: KSC5402DTTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 450V |
| Max Power Dissipation | 50W |
| Current Rating | 2A |
| Frequency | 11MHz |
| Base Part Number | KSC5402 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 50W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 11MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 450V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 1A 1V |
| Current - Collector Cutoff (Max) | 100μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 200mA, 1A |
| Collector Emitter Breakdown Voltage | 450V |
| Transition Frequency | 11MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Base Voltage (VCBO) | 1kV |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 6 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSC5402DTTU Overview
This device has a DC current gain of 6 @ 1A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 200mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.Single BJT transistor contains a transSingle BJT transistorion frequency of 11MHz.Maximum collector currents can be below 2A volts.
KSC5402DTTU Features
the DC current gain for this device is 6 @ 1A 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 750mV @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 2A
a transition frequency of 11MHz
KSC5402DTTU Applications
There are a lot of ON Semiconductor KSC5402DTTU applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
