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KSC5019MTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSC5019MTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 507
- Description: KSC5019MTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 10V |
| Max Power Dissipation | 750mW |
| Terminal Position | BOTTOM |
| Current Rating | 2A |
| Frequency | 150MHz |
| Base Part Number | KSC5019 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 750mW |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 10V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 2A |
| Collector Emitter Breakdown Voltage | 10V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 10V |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 140 |
| Height | 4.58mm |
| Length | 4.58mm |
| Width | 3.86mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSC5019MTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 500mA 1V.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.When VCE saturation is 500mV @ 50mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.A transition frequency of 150MHz is present in the part.An input voltage of 10V volts is the breakdown voltage.The maximum collector current is 2A volts.
KSC5019MTA Features
the DC current gain for this device is 140 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 150MHz
KSC5019MTA Applications
There are a lot of ON Semiconductor KSC5019MTA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
