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KSC3953DSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSC3953DSTU
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 311
- Description: KSC3953DSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | TO-126-3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Base Part Number | KSC3953 |
| Power - Max | 1.3W |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 3mA, 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Current - Collector (Ic) (Max) | 200mA |
| Frequency - Transition | 400MHz |
KSC3953DSTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 10V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 3mA, 30mA.There is no device package available from the supplier for this product.Collector Emitter Breakdown occurs at 120VV - Maximum voltage.
KSC3953DSTU Features
the DC current gain for this device is 60 @ 10mA 10V
the vce saturation(Max) is 1V @ 3mA, 30mA
the supplier device package of TO-126-3
KSC3953DSTU Applications
There are a lot of ON Semiconductor KSC3953DSTU applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
