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KSC388CYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSC388CYTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 4836
- Description: KSC388CYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LIFETIME (Last Updated: 6 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 300mW |
| Terminal Position | BOTTOM |
| Current Rating | 50mA |
| Frequency | 300MHz |
| Base Part Number | KSC388 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 12.5mA 12.5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 1.5mA, 15mA |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 200mV |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 20 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSC388CYTA Overview
DC current gain in this device equals 20 @ 12.5mA 12.5V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 200mV allows maximum design flexibility.A VCE saturation (Max) of 200mV @ 1.5mA, 15mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 4V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 50mA.300MHz is present in the transition frequency.The breakdown input voltage is 25V volts.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
KSC388CYTA Features
the DC current gain for this device is 20 @ 12.5mA 12.5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 1.5mA, 15mA
the emitter base voltage is kept at 4V
the current rating of this device is 50mA
a transition frequency of 300MHz
KSC388CYTA Applications
There are a lot of ON Semiconductor KSC388CYTA applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
