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KSC3503DSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSC3503DSTU
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 4021
- Description: KSC3503DSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Weight | 761mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 300V |
| Max Power Dissipation | 7W |
| Current Rating | 100mA |
| Frequency | 150MHz |
| Base Part Number | KSC3503 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 7W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 300V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 2mA, 20mA |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Max Breakdown Voltage | 300V |
| Collector Base Voltage (VCBO) | 300V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Height | 11mm |
| Length | 8mm |
| Width | 3.25mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSC3503DSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 10V.A collector emitter saturation voltage of 600mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 2mA, 20mA.An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 300V volts.When collector current reaches its maximum, it can reach 100mA volts.
KSC3503DSTU Features
the DC current gain for this device is 40 @ 10mA 10V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 150MHz
KSC3503DSTU Applications
There are a lot of ON Semiconductor KSC3503DSTU applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
