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KSC3296YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSC3296YTU
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 3576
- Description: KSC3296YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Weight | 2.27g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 150V |
| Max Power Dissipation | 20W |
| Current Rating | 1.5A |
| Frequency | 4MHz |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 20W |
| Case Connection | ISOLATED |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 150V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 150V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Base Voltage (VCBO) | 150V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSC3296YTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 500mA 10V.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 4MHz in the part.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
KSC3296YTU Features
the DC current gain for this device is 40 @ 500mA 10V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 4MHz
KSC3296YTU Applications
There are a lot of ON Semiconductor KSC3296YTU applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
