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KSC2383YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSC2383YTA
- Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet:
- Stock: 5633
- Description: KSC2383YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Width | 3.9mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Number of Pins | 3 |
| Weight | 371.1027mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 160V |
| Max Power Dissipation | 900mW |
| Terminal Position | BOTTOM |
| Current Rating | 1A |
| Frequency | 100MHz |
| Base Part Number | KSC2383 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 900mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 160V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 200mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 160V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 1.5V |
| Max Breakdown Voltage | 160V |
| Collector Base Voltage (VCBO) | 160V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 60 |
| Height | 8mm |
| Length | 4.9mm |
KSC2383YTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 200mA 5V DC current gain.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 50mA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 100MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 1A volts can be achieved.
KSC2383YTA Features
the DC current gain for this device is 160 @ 200mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 100MHz
KSC2383YTA Applications
There are a lot of ON Semiconductor KSC2383YTA applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
