KSC1187YBU

KSC1187YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-KSC1187YBU
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: pdf
  • Stock: 594
  • Description: KSC1187YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Power - Max 250mW
Gain Bandwidth Product 700MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 20V
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 30mA
Frequency - Transition 700MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 4V
hFE Min 40
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Max Power Dissipation 250mW
Current Rating 30mA
Frequency 700MHz
Base Part Number KSC1187
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 250mW

KSC1187YBU Overview


This device has a DC current gain of 120 @ 2mA 10V, which is the ratio between the collector current and the base current.Emitter base voltages of 4V can achieve high levels of efficiency.Its current rating is 30mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The product comes in the supplier device package of TO-92-3.Device displays Collector Emitter Breakdown (20V maximal voltage).During maximum operation, collector current can be as low as 30mA volts.

KSC1187YBU Features


the DC current gain for this device is 120 @ 2mA 10V
the emitter base voltage is kept at 4V
the current rating of this device is 30mA
the supplier device package of TO-92-3

KSC1187YBU Applications


There are a lot of ON Semiconductor KSC1187YBU applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

In Stock

Please send RFQ , we will respond immediately.