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KSC1009YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSC1009YTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 1963
- Description: KSC1009YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2001 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 140V |
| Max Power Dissipation | 800mW |
| Terminal Position | BOTTOM |
| Current Rating | 700mA |
| Frequency | 50MHz |
| Base Part Number | KSC1009 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 800mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 140V |
| Max Collector Current | 700mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 20mA, 200mA |
| Collector Emitter Breakdown Voltage | 140V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 200mV |
| Max Breakdown Voltage | 140V |
| Collector Base Voltage (VCBO) | 160V |
| Emitter Base Voltage (VEBO) | 8V |
| hFE Min | 40 |
| Height | 4.58mm |
| Length | 4.58mm |
| Width | 3.86mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSC1009YTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 50mA 2V.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 20mA, 200mA.The emitter base voltage can be kept at 8V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (700mA).As you can see, the part has a transition frequency of 50MHz.An input voltage of 140V volts is the breakdown voltage.Maximum collector currents can be below 700mA volts.
KSC1009YTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 700mV @ 20mA, 200mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1009YTA Applications
There are a lot of ON Semiconductor KSC1009YTA applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
