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KSC1008OBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSC1008OBU
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 5765
- Description: KSC1008OBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 179mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 800mW |
| Terminal Position | BOTTOM |
| Current Rating | 700mA |
| Frequency | 50MHz |
| Base Part Number | KSC1008 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 800mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 700mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 8V |
| hFE Min | 40 |
| Height | 4.58mm |
| Length | 4.58mm |
| Width | 3.86mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
KSC1008OBU Overview
In this device, the DC current gain is 70 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 500mA.An emitter's base voltage can be kept at 8V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In the part, the transition frequency is 50MHz.Maximum collector currents can be below 700mA volts.
KSC1008OBU Features
the DC current gain for this device is 70 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008OBU Applications
There are a lot of ON Semiconductor KSC1008OBU applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
