KSB596Y

KSB596Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-KSB596Y
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 2121
  • Description: KSB596Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Voltage - Rated DC -80V
Max Power Dissipation 30W
Current Rating -4A
Frequency 3MHz
Base Part Number KSB596
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 30W
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 5V
Current - Collector Cutoff (Max) 70μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.7V @ 300mA, 3A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage -1V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
hFE Min 40
RoHS Status RoHS Compliant
Lead Free Lead Free

KSB596Y Overview


This device has a DC current gain of 120 @ 500mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -1V ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 300mA, 3A.With the emitter base voltage set at -5V, an efficient operation can be achieved.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

KSB596Y Features


the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1.7V @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz

KSB596Y Applications


There are a lot of ON Semiconductor KSB596Y applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

In Stock

Please send RFQ , we will respond immediately.