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KSB564AOBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSB564AOBU
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 4810
- Description: KSB564AOBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Current Rating | -1A |
| Frequency | 110MHz |
| Base Part Number | KSB564 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 800mW |
| Power - Max | 800mW |
| Gain Bandwidth Product | 110MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 25V |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 1A |
| Collector Emitter Saturation Voltage | -500mV |
| Frequency - Transition | 110MHz |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 70 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92-3 |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -25V |
| Max Power Dissipation | 800mW |
KSB564AOBU Overview
In this device, the DC current gain is 70 @ 100mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Product package TO-92-3 comes from the supplier.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
KSB564AOBU Features
the DC current gain for this device is 70 @ 100mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
the supplier device package of TO-92-3
KSB564AOBU Applications
There are a lot of ON Semiconductor KSB564AOBU applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
