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KSB1366G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSB1366G
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 9904
- Description: KSB1366G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 9MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | -7V |
| hFE Min | 100 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 2W |
| Current Rating | -3A |
| Frequency | 9MHz |
| Base Part Number | KSB1366 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2W |
| Case Connection | ISOLATED |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 9MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 100μA ICBO |
KSB1366G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 500mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 2A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -3A current rating.As a result, the part has a transition frequency of 9MHz.In extreme cases, the collector current can be as low as 3A volts.
KSB1366G Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
a transition frequency of 9MHz
KSB1366G Applications
There are a lot of ON Semiconductor KSB1366G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
