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KSB1151YSTSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSB1151YSTSTU
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 4507
- Description: KSB1151YSTSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Weight | 758.009549mg |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 1.3W |
| Current Rating | -5A |
| Base Part Number | KSB1151 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.3W |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 2A 1V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -140mV |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | -7V |
| hFE Min | 100 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
KSB1151YSTSTU Overview
In this device, the DC current gain is 160 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of -140mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 200mA, 2A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-5A).When collector current reaches its maximum, it can reach 5A volts.
KSB1151YSTSTU Features
the DC current gain for this device is 160 @ 2A 1V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -5A
KSB1151YSTSTU Applications
There are a lot of ON Semiconductor KSB1151YSTSTU applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
