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KSB1121TTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSB1121TTF
- Package: TO-243AA
- Datasheet:
- Stock: 6801
- Description: KSB1121TTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -25V |
| Max Power Dissipation | 1.3W |
| Current Rating | -2A |
| Frequency | 150MHz |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Power - Max | 1.3W |
| Gain Bandwidth Product | 150MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 600mV |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 75mA, 1.5A |
| Collector Emitter Breakdown Voltage | 25V |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 2A |
| Collector Emitter Saturation Voltage | -350mV |
| Frequency - Transition | 150MHz |
| Collector Base Voltage (VCBO) | -30V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 100 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | SOT-89-3 |
| Weight | 130.5mg |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
KSB1121TTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of -350mV, it offers maximum design flexibility.When VCE saturation is 600mV @ 75mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at -6V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Product package SOT-89-3 comes from the supplier.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
KSB1121TTF Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 600mV @ 75mA, 1.5A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
the supplier device package of SOT-89-3
KSB1121TTF Applications
There are a lot of ON Semiconductor KSB1121TTF applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
