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KSB1116GBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSB1116GBU
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 7851
- Description: KSB1116GBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated DC | -50V |
| Max Power Dissipation | 750mW |
| Current Rating | -1A |
| Frequency | 120MHz |
| Base Part Number | KSB1116 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 750mW |
| Gain Bandwidth Product | 120MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 135 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
KSB1116GBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -200mV.When VCE saturation is 300mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at -6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).The maximum collector current is 1A volts.
KSB1116GBU Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -1A
KSB1116GBU Applications
There are a lot of ON Semiconductor KSB1116GBU applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
