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KSB1017YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSB1017YTU
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 8608
- Description: KSB1017YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Weight | 2.27g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 25W |
| Current Rating | -4A |
| Frequency | 9MHz |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 25W |
| Case Connection | ISOLATED |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 9MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 30μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 300mA, 3A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 9MHz |
| Collector Emitter Saturation Voltage | -1V |
| Collector Base Voltage (VCBO) | -80V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 40 |
| Height | 15.87mm |
| Length | 10.16mm |
| Width | 2.54mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
KSB1017YTU Overview
DC current gain in this device equals 120 @ 500mA 5V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of -1V ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.7V @ 300mA, 3A.Emitter base voltages of -5V can achieve high levels of efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 9MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
KSB1017YTU Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1.7V @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 9MHz
KSB1017YTU Applications
There are a lot of ON Semiconductor KSB1017YTU applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
