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KSA992FBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSA992FBU
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 9832
- Description: KSA992FBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 179mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -120V |
| Max Power Dissipation | 500mW |
| Terminal Position | BOTTOM |
| Current Rating | -50mA |
| Frequency | 100MHz |
| Base Part Number | KSA992 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 120V |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA 6V |
| Current - Collector Cutoff (Max) | 1μA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 120V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -90mV |
| Collector Base Voltage (VCBO) | -120V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 200 |
| Height | 4.58mm |
| Length | 4.58mm |
| Width | 3.86mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSA992FBU Overview
In this device, the DC current gain is 300 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -90mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at -5V to gain high efficiency.This device has a current rating of -50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 100MHz.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
KSA992FBU Features
the DC current gain for this device is 300 @ 1mA 6V
a collector emitter saturation voltage of -90mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 100MHz
KSA992FBU Applications
There are a lot of ON Semiconductor KSA992FBU applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
