KSA928AYTA

KSA928AYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-KSA928AYTA
  • Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Datasheet: pdf
  • Stock: 5940
  • Description: KSA928AYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 120MHz
Collector Emitter Saturation Voltage -2V
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Height 8mm
Length 4.9mm
Width 3.9mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Weight 371.1027mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -2A
Frequency 120MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number KSA928
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 120MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V

KSA928AYTA Overview


DC current gain in this device equals 160 @ 500mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -2V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 2V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).Emitter base voltages of -5V can achieve high levels of efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.120MHz is present in the transition frequency.As a result, it can handle voltages as low as 30V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

KSA928AYTA Features


the DC current gain for this device is 160 @ 500mA 2V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 30mA, 1.5A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 120MHz

KSA928AYTA Applications


There are a lot of ON Semiconductor KSA928AYTA applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

In Stock

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