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KSA708YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSA708YTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 903
- Description: KSA708YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2007 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 800mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | -700mA |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | KSA708 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 800mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 700mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | -300mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | -80V |
| Emitter Base Voltage (VEBO) | -8V |
| hFE Min | 40 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSA708YTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at -8V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-700mA).In the part, the transition frequency is 50MHz.An input voltage of 60V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 700mA volts.
KSA708YTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -8V
the current rating of this device is -700mA
a transition frequency of 50MHz
KSA708YTA Applications
There are a lot of ON Semiconductor KSA708YTA applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
