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KSA473YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSA473YTU
- Package: TO-220-3
- Datasheet:
- Stock: 5327
- Description: KSA473YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 10W |
| Current Rating | -3A |
| Frequency | 100MHz |
| Base Part Number | KSA473 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 10W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Base Voltage (VCBO) | -30V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 70 |
| Height | 9.4mm |
| Length | 10.67mm |
| Width | 4.83mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSA473YTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 100MHz.When collector current reaches its maximum, it can reach 3A volts.
KSA473YTU Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 100MHz
KSA473YTU Applications
There are a lot of ON Semiconductor KSA473YTU applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
