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KSA1381ESTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSA1381ESTU
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 4837
- Description: KSA1381ESTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Weight | 761mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -300V |
| Max Power Dissipation | 7W |
| Current Rating | -100mA |
| Frequency | 150MHz |
| Base Part Number | KSA1381 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 7W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | -300V |
| Max Collector Current | -100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 2mA, 20mA |
| Collector Emitter Breakdown Voltage | -300V |
| Voltage - Collector Emitter Breakdown (Max) | 300V |
| Current - Collector (Ic) (Max) | 100mA |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | -600mV |
| Collector Base Voltage (VCBO) | -300V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 40 |
| Max Junction Temperature (Tj) | 150°C |
| Height | 14.2mm |
| Length | 8mm |
| Width | 3.25mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSA1381ESTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at -5V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.As a result, the part has a transition frequency of 150MHz.There is a 300V maximal voltage in the device due to collector-emitter breakdown.The maximum collector current is -100mA volts.
KSA1381ESTU Features
the DC current gain for this device is 100 @ 10mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
KSA1381ESTU Applications
There are a lot of ON Semiconductor KSA1381ESTU applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
