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KSA1156OSTSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSA1156OSTSTU
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 5672
- Description: KSA1156OSTSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated DC | -400V |
| Max Power Dissipation | 1W |
| Current Rating | -500mA |
| Base Part Number | KSA1156 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Base Voltage (VCBO) | -400V |
| Emitter Base Voltage (VEBO) | -7V |
| hFE Min | 30 |
| Turn Off Time-Max (toff) | 5000ns |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 48 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Weight | 758mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
KSA1156OSTSTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 100mA 5V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Collector current can be as low as 500mA volts at its maximum.
KSA1156OSTSTU Features
the DC current gain for this device is 60 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at -7V
the current rating of this device is -500mA
KSA1156OSTSTU Applications
There are a lot of ON Semiconductor KSA1156OSTSTU applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
