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KSA1015YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSA1015YTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 6274
- Description: KSA1015YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 70 |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 18 hours ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -50V |
| Max Power Dissipation | 400mW |
| Terminal Position | BOTTOM |
| Current Rating | -150mA |
| Frequency | 80MHz |
| Base Part Number | KSA1015 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 400mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 80MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 150mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 80MHz |
| Collector Emitter Saturation Voltage | -300mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | -50V |
KSA1015YTA Overview
In this device, the DC current gain is 120 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.Emitter base voltages of -5V can achieve high levels of efficiency.The current rating of this fuse is -150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 80MHz.An input voltage of 50V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 150mA volts.
KSA1015YTA Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 80MHz
KSA1015YTA Applications
There are a lot of ON Semiconductor KSA1015YTA applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
