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KSA1013OTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSA1013OTA
- Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet:
- Stock: 3477
- Description: KSA1013OTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 16 hours ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Number of Pins | 3 |
| Weight | 371.1027mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -160V |
| Max Power Dissipation | 900mW |
| Terminal Position | BOTTOM |
| Current Rating | -1A |
| Frequency | 50MHz |
| Base Part Number | KSA1013 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 900mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 160V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 200mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 160V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | -1.5V |
| Max Breakdown Voltage | 160V |
| Collector Base Voltage (VCBO) | -160V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 60 |
| Height | 8.2mm |
| Length | 5.1mm |
| Width | 4.1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSA1013OTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 200mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of -1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 50mA, 500mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 160V volts.Maximum collector currents can be below 1A volts.
KSA1013OTA Features
the DC current gain for this device is 100 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013OTA Applications
There are a lot of ON Semiconductor KSA1013OTA applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
