JDP4P02AT(TE85L)

JDP4P02AT(TE85L) datasheet pdf and Diodes - RF product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • NO: 4669-JDP4P02AT(TE85L)
  • Package: 4-SMD, Flat Leads
  • Datasheet: pdf
  • Stock: 4047
  • Description: JDP4P02AT(TE85L) datasheet pdf and Diodes - RF product details from Toshiba Semiconductor and Storage stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Package / Case 4-SMD, Flat Leads
Surface Mount YES
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory PIN Diodes
Max Current Rating 50mA
Diode Type PIN - 2 Independent
Capacitance @ Vr, F 0.4pF @ 1V 1MHz
Voltage - Peak Reverse (Max) 30V
Breakdown Voltage-Min 30V
Reverse Test Voltage 1V
Diode Capacitance-Nom 0.3pF
Resistance @ If, F 1.5Ohm @ 10mA 100MHz
Diode Res Test Current 10mA
Diode Res Test Frequency 100MHz
RoHS Status RoHS Compliant

JDP4P02AT(TE85L) Overview


In accordance with the applicable device specifications, this device operates at a maximum peak reverse voltage of 30V.There may be times when this device runs at its lowest possible breakdown voltage, which is 30V.RF diode is necessary to have a reverse test voltage wRF diodehin 1V in order to obtain a valid conversion result.

JDP4P02AT(TE85L) Features


at its lowest breakdown voltage of 30V

JDP4P02AT(TE85L) Applications


There are a lot of Toshiba Semiconductor and Storage JDP4P02AT(TE85L) applications of RF diodes.

  • RF attenuators and switches
  • Bandswitch for TV tuners
  • Band switching
  • Sampling circuits
  • RF voltage doubler
  • (SAT) TV
  • UHF mixer
  • Phase detection
  • Two elements in series configuration in a small-sized plastic SMD package
  • Diode ring mixer

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