JDP2S12CR(TE85L,Q

JDP2S12CR(TE85L,Q datasheet pdf and Diodes - RF product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • NO: 4669-JDP2S12CR(TE85L,Q
  • Package: SOD-123F
  • Datasheet: pdf
  • Stock: 3313
  • Description: JDP2S12CR(TE85L,Q datasheet pdf and Diodes - RF product details from Toshiba Semiconductor and Storage stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Package / Case SOD-123F
Surface Mount YES
Operating Temperature 175°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 400mOhm
Capacitance 1pF
Subcategory PIN Diodes
Max Power Dissipation 1W
Reach Compliance Code unknown
Max Current Rating 1A
Element Configuration Single
Diode Type PIN - Single
Capacitance @ Vr, F 1.3pF @ 40V 1MHz
Reverse Voltage (DC) 180V
Reverse Test Voltage 40V
Diode Capacitance-Nom 1pF
Resistance @ If, F 700mOhm @ 10mA 100MHz
Diode Res Test Current 10mA
Diode Res Test Frequency 100MHz
RoHS Status RoHS Compliant

JDP2S12CR(TE85L,Q Overview


In this case, the device has a resistance of 400mOhm.This is a case of 1pF capacitance.In order to obtain a valid conversion result, the reverse test voltage must be within 40V.

JDP2S12CR(TE85L,Q Features


A resistance of 400mOhm
1pF capacitance

JDP2S12CR(TE85L,Q Applications


There are a lot of Toshiba Semiconductor and Storage JDP2S12CR(TE85L,Q applications of RF diodes.

  • Radar systems and modules
  • Low-loss, high-power limiters
  • Low diode capacitance
  • Set top boxes
  • Two elements in series configuration in a small-sized plastic SMD package
  • Car radio
  • Bandswitch for TV tuners
  • Wearables
  • Surface-mount band-switching circuits
  • UHF mixer

In Stock

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