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JANTXV2N5680 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JANTXV2N5680
- Package: TO-205AD, TO-39-3 Metal Can
- Datasheet:
- Stock: 8908
- Description: JANTXV2N5680 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Contact Plating | Lead, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2002 |
| Series | Military, MIL-PRF-19500/582 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 1W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 120V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 250mA 2V |
| Current - Collector Cutoff (Max) | 10μA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Transition Frequency | 30MHz |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 4V |
| RoHS Status | Non-RoHS Compliant |
JANTXV2N5680 Overview
This device has a DC current gain of 40 @ 250mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).Emitter base voltages of 4V can achieve high levels of efficiency.As a result, the part has a transition frequency of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JANTXV2N5680 Features
the DC current gain for this device is 40 @ 250mA 2V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 4V
a transition frequency of 30MHz
JANTXV2N5680 Applications
There are a lot of Microsemi Corporation JANTXV2N5680 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
