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JANTXV2N3737 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JANTXV2N3737
- Package: TO-206AB, TO-46-3 Metal Can
- Datasheet:
- Stock: 7595
- Description: JANTXV2N3737 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Series | Military, MIL-PRF-19500/395 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.21.00.95 |
| Max Power Dissipation | 500mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Pin Count | 3 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 500mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 900mV |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A 1.5V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 75V |
| Turn Off Time-Max (toff) | 60ns |
| Turn On Time-Max (ton) | 48ns |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
JANTXV2N3737 Overview
In this device, the DC current gain is 20 @ 1A 1.5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 900mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A maximum collector current of 1.5A volts can be achieved.
JANTXV2N3737 Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
JANTXV2N3737 Applications
There are a lot of Microsemi Corporation JANTXV2N3737 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
