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JANTXV2N2432A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JANTXV2N2432A
- Package: TO-206AA, TO-18-3 Metal Can
- Datasheet:
- Stock: 5065
- Description: JANTXV2N2432A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~175°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| Series | Military, MIL-PRF-19500/313 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Power Dissipation | 300mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Pin Count | 3 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 300mW |
| Case Connection | COLLECTOR |
| Transistor Application | CHOPPER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1mA 5V |
| Current - Collector Cutoff (Max) | 10nA |
| Vce Saturation (Max) @ Ib, Ic | 0.15mV @ 500μA, 10V |
| Transition Frequency | 20MHz |
| Collector Base Voltage (VCBO) | 45V |
| Emitter Base Voltage (VEBO) | 18V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Factory Lead Time | 20 Weeks |
JANTXV2N2432A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 1mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 0.15mV @ 500μA, 10V.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 18V.20MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 100mA volts.
JANTXV2N2432A Features
the DC current gain for this device is 80 @ 1mA 5V
the vce saturation(Max) is 0.15mV @ 500μA, 10V
the emitter base voltage is kept at 18V
a transition frequency of 20MHz
JANTXV2N2432A Applications
There are a lot of Microsemi Corporation JANTXV2N2432A applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
