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JANTX2N5039 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JANTX2N5039
- Package: TO-204AA, TO-3
- Datasheet:
- Stock: 7040
- Description: JANTX2N5039 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2002 |
| Series | Military, MIL-PRF-19500/439 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 140W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Pin Count | 2 |
| JESD-30 Code | O-MBFM-P2 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 140W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 75V |
| Max Collector Current | 20A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2A 5V |
| Current - Collector Cutoff (Max) | 1μA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 10A |
| Transition Frequency | 60MHz |
| Collector Base Voltage (VCBO) | 125V |
| Emitter Base Voltage (VEBO) | 7V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
JANTX2N5039 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 2A 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 7V to gain high efficiency.60MHz is present in the transition frequency.Collector current can be as low as 20A volts at its maximum.
JANTX2N5039 Features
the DC current gain for this device is 30 @ 2A 5V
the vce saturation(Max) is 1V @ 1A, 10A
the emitter base voltage is kept at 7V
a transition frequency of 60MHz
JANTX2N5039 Applications
There are a lot of Microsemi Corporation JANTX2N5039 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
