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JANTX2N4449 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JANTX2N4449
- Package: TO-206AB, TO-46-3 Metal Can
- Datasheet:
- Stock: 6286
- Description: JANTX2N4449 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Series | Military, MIL-PRF-19500/317 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 600mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Pin Count | 3 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Power - Max | 360mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 400nA |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Transition Frequency | 500MHz |
| Collector Base Voltage (VCBO) | 40V |
| Turn Off Time-Max (toff) | 18ns |
| Turn On Time-Max (ton) | 12ns |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
JANTX2N4449 Overview
In this device, the DC current gain is 20 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 10mA, 100mA.In this part, there is a transition frequency of 500MHz.Collector Emitter Breakdown occurs at 20VV - Maximum voltage.
JANTX2N4449 Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
a transition frequency of 500MHz
JANTX2N4449 Applications
There are a lot of Microsemi Corporation JANTX2N4449 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
