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JANTX2N3700 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JANTX2N3700
- Package: TO-206AA, TO-18-3 Metal Can
- Datasheet:
- Stock: 113
- Description: JANTX2N3700 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 4 weeks ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2002 |
| Series | Military, MIL-PRF-19500/391 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Power Dissipation | 500mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Pin Count | 3 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 500mW |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 10nA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 100MHz |
| Collector Base Voltage (VCBO) | 140V |
| Emitter Base Voltage (VEBO) | 7V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
JANTX2N3700 Overview
DC current gain in this device equals 50 @ 500mA 10V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 7V for high efficiency.Parts of this part have transition frequencies of 100MHz.When collector current reaches its maximum, it can reach 1A volts.
JANTX2N3700 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
JANTX2N3700 Applications
There are a lot of Microsemi Corporation JANTX2N3700 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
