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JANTX2N3501 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from American Microsemiconductor, Inc. stock available at Feilidi
- Manufacturer: American Microsemiconductor, Inc.
- NO: 63-JANTX2N3501
- Package: TO-205AD, TO-39-3 Metal Can
- Datasheet:
- Stock: 8707
- Description: JANTX2N3501 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from American Microsemiconductor, Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Number of Pins | 3 |
| Supplier Device Package | TO-39 (TO-205AD) |
| Operating Temperature | -65°C~200°C TA |
| Packaging | Bulk |
| Published | 2002 |
| Series | Military, MIL-PRF-19500/366 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 1W |
| Power - Max | 1W |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 150V |
| Max Collector Current | 300mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Collector Emitter Breakdown Voltage | 150V |
| Voltage - Collector Emitter Breakdown (Max) | 150V |
| Current - Collector (Ic) (Max) | 300mA |
| Collector Base Voltage (VCBO) | 150V |
| Emitter Base Voltage (VEBO) | 6V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
JANTX2N3501 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Product package TO-39 (TO-205AD) comes from the supplier.Detection of Collector Emitter Breakdown at 150V maximal voltage is present.During maximum operation, collector current can be as low as 300mA volts.
JANTX2N3501 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
JANTX2N3501 Applications
There are a lot of American Microsemiconductor, Inc. JANTX2N3501 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
