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JANTX2N2906AUB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JANTX2N2906AUB
- Package: 3-SMD, No Lead
- Datasheet:
- Stock: 1773
- Description: JANTX2N2906AUB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Number of Pins | 3 |
| Supplier Device Package | UB |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| Series | Military, MIL-PRF-19500/291 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Number of Elements | 1 |
| Polarity | PNP |
| Power Dissipation | 400mW |
| Power - Max | 500mW |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 50nA |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 60V |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 600mA |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
JANTX2N2906AUB Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.This product comes in a UB device package from the supplier.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
JANTX2N2906AUB Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
JANTX2N2906AUB Applications
There are a lot of Microsemi Corporation JANTX2N2906AUB applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
