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JANS2N5415 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JANS2N5415
- Package: TO-205AA, TO-5-3 Metal Can
- Datasheet:
- Stock: 6870
- Description: JANS2N5415 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 36 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| Series | Military, MIL-PRF-19500/485 |
| Pbfree Code | no |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 750mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Pin Count | 3 |
| Reference Standard | MIL-19500/485H |
| JESD-30 Code | O-MBCY-W4 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Power - Max | 750mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 200V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 1mA |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
| Collector Base Voltage (VCBO) | 200V |
| Turn Off Time-Max (toff) | 10000ns |
| Turn On Time-Max (ton) | 1000ns |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
JANS2N5415 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 50mA 10V.When VCE saturation is 2V @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
JANS2N5415 Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
JANS2N5415 Applications
There are a lot of Microsemi Corporation JANS2N5415 applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
