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JANS2N3439UA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JANS2N3439UA
- Package: 4-SMD, No Lead
- Datasheet:
- Stock: 844
- Description: JANS2N3439UA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Turn Off Time-Max (toff) | 10000ns |
| Turn On Time-Max (ton) | 1000ns |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, No Lead |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| Series | Military, MIL-PRF-19500/368 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 800mW |
| Terminal Position | DUAL |
| Pin Count | 4 |
| Reference Standard | MIL-19500/368F |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 350V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA 10V |
| Current - Collector Cutoff (Max) | 2μA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector (Ic) (Max) | 1A |
| Collector Base Voltage (VCBO) | 450V |
JANS2N3439UA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 20mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 4mA, 50mA.When collector current reaches its maximum, it can reach 1A volts.
JANS2N3439UA Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
JANS2N3439UA Applications
There are a lot of Microsemi Corporation JANS2N3439UA applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
