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JAN2N720A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JAN2N720A
- Package: TO-206AA, TO-18-3 Metal Can
- Datasheet:
- Stock: 8583
- Description: JAN2N720A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Contact Plating | Lead, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2002 |
| Series | Military, MIL-PRF-19500/182 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Power Dissipation | 500mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 500mW |
| Case Connection | COLLECTOR |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 15mA, 150mA |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 7V |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
JAN2N720A Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 5V @ 15mA, 150mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.A maximum collector current of 500mA volts can be achieved.
JAN2N720A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JAN2N720A Applications
There are a lot of Microsemi Corporation JAN2N720A applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
