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JAN2N6350 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JAN2N6350
- Package: TO-205AC, TO-33-4 Metal Can
- Datasheet:
- Stock: 9460
- Description: JAN2N6350 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 36 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-205AC, TO-33-4 Metal Can |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2002 |
| Series | Military, MIL-PRF-19500/472 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Pin Count | 4 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Power - Max | 1W |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 5A 5V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 5mA, 5A |
| Current - Collector (Ic) (Max) | 5A |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 12V |
| Turn On Time-Max (ton) | 500ns |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
JAN2N6350 Overview
DC current gain in this device equals 2000 @ 5A 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 12V can achieve high levels of efficiency.
JAN2N6350 Features
the DC current gain for this device is 2000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 5mA, 5A
the emitter base voltage is kept at 12V
JAN2N6350 Applications
There are a lot of Microsemi Corporation JAN2N6350 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
