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JAN2N2946A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JAN2N2946A
- Package: TO-206AB, TO-46-3 Metal Can
- Datasheet:
- Stock: 4688
- Description: JAN2N2946A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| Series | Military, MIL-PRF-19500/382 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 400mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Pin Count | 3 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 400mW |
| Case Connection | COLLECTOR |
| Transistor Application | CHOPPER |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 35V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 1mA 500mV |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Collector Emitter Breakdown Voltage | 35V |
| Transition Frequency | 5MHz |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 40V |
| Turn Off Time-Max (toff) | 450ns |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
JAN2N2946A Overview
DC current gain in this device equals 50 @ 1mA 500mV, which is the ratio of the base current to the collector current.A high level of efficiency can be achieved if the base voltage of the emitter remains at 40V.As a result, the part has a transition frequency of 5MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
JAN2N2946A Features
the DC current gain for this device is 50 @ 1mA 500mV
the emitter base voltage is kept at 40V
a transition frequency of 5MHz
JAN2N2946A Applications
There are a lot of Microsemi Corporation JAN2N2946A applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
